Infineon Dual FF6MR 1 Type N-Channel MOSFET, 250 A, 1200 V Enhancement AG-62MM FF6MR12KM1BOSA1

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Subtotal (1 unit)*

Kr.10 016 19 

(exc. VAT)

Kr.12 520 24 

(inc. VAT)

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  • Plus 28 unit(s) shipping from 29. desember 2025
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Units
Per unit
1 - 1Kr. 10 016,19
2 - 2Kr. 9 515,33
3 +Kr. 9 114,71

*price indicative

Packaging Options:
RS Stock No.:
222-4796
Mfr. Part No.:
FF6MR12KM1BOSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

250A

Maximum Drain Source Voltage Vds

1200V

Series

FF6MR

Package Type

AG-62MM

Mount Type

Chassis

Maximum Drain Source Resistance Rds

5.81mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-40°C

Forward Voltage Vf

5.85V

Maximum Power Dissipation Pd

20mW

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Transistor Configuration

Dual

Standards/Approvals

No

Number of Elements per Chip

1

Automotive Standard

No

The Infineon 62 mm 1200 V, 6 mΩ half bridge module with Cool Sic™ MOSFET.

High current density

Low switching losses

Superior gate oxide reliability

Highest robustness against humidity

Robust integrated body diode, and thus optimal thermal conditions

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