Infineon IMW1 Type N-Channel MOSFET, 36 A, 1200 V Enhancement, 3-Pin TO-247

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Subtotal (1 tube of 30 units)*

Kr.1 824 57 

(exc. VAT)

Kr.2 280 72 

(inc. VAT)

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  • Plus 30 unit(s) shipping from 29. desember 2025
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Units
Per unit
Per Tube*
30 - 30Kr. 60,819Kr. 1 824,57
60 - 60Kr. 57,78Kr. 1 733,40
90 +Kr. 54,13Kr. 1 623,90

*price indicative

RS Stock No.:
222-4855
Mfr. Part No.:
IMW120R060M1HXKSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

36A

Maximum Drain Source Voltage Vds

1200V

Package Type

TO-247

Series

IMW1

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

60mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon CoolSiC™ 1200 V, 60 mΩ SiC MOSFET in TO247-3 package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability. In comparison to traditional silicon (Si) based switches like IGBTs and MOSFETs, the SiC MOSFET offers a series of advantages.

Best in class switching and conduction losses

Benchmark high threshold voltage, Vth > 4 V

0V turn-off gate voltage for easy and simple gate drive

Wide gate-source voltage range

Robust and low loss body diode rated for hard commutation

Temperature independent turn-off switching losses

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