Infineon IPA60R Type N-Channel MOSFET, 18 A, 650 V Enhancement, 3-Pin TO-220 IPAW60R180P7SXKSA1

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Subtotal (1 pack of 10 units)*

Kr.127 97 

(exc. VAT)

Kr.159 96 

(inc. VAT)

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Units
Per unit
Per Pack*
10 - 40Kr. 12,797Kr. 127,97
50 - 90Kr. 12,161Kr. 121,61
100 - 240Kr. 11,657Kr. 116,57
250 - 490Kr. 11,12Kr. 111,20
500 +Kr. 10,365Kr. 103,65

*price indicative

Packaging Options:
RS Stock No.:
222-4885
Mfr. Part No.:
IPAW60R180P7SXKSA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

18A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-220

Series

IPA60R

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

180mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon 600V CoolMOS™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency.

ESD ruggedness of ≥ 2kV (HBM class 2)

Integrated gate resistor R G

Rugged body diode

Wide portfolio in through hole and surface mount packages

Both standard grade and industrial grade parts are available

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