Infineon IPL60R Type N-Channel MOSFET, 33 A, 600 V Enhancement, 5-Pin ThinPAK IPL60R075CFD7AUMA1
- RS Stock No.:
- 222-4912
- Mfr. Part No.:
- IPL60R075CFD7AUMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 2 units)*
Kr.129 38
(exc. VAT)
Kr.161 72
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 3 698 unit(s) shipping from 29. desember 2025
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | Kr. 64,69 | Kr. 129,38 |
| 20 - 48 | Kr. 57,485 | Kr. 114,97 |
| 50 - 98 | Kr. 53,71 | Kr. 107,42 |
| 100 - 198 | Kr. 49,82 | Kr. 99,64 |
| 200 + | Kr. 46,505 | Kr. 93,01 |
*price indicative
- RS Stock No.:
- 222-4912
- Mfr. Part No.:
- IPL60R075CFD7AUMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 33A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | ThinPAK | |
| Series | IPL60R | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 75mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 67nC | |
| Maximum Power Dissipation Pd | 189W | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 8.1mm | |
| Width | 8.1 mm | |
| Height | 1.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 33A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type ThinPAK | ||
Series IPL60R | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 75mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 67nC | ||
Maximum Power Dissipation Pd 189W | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 8.1mm | ||
Width 8.1 mm | ||
Height 1.1mm | ||
Automotive Standard No | ||
The Infineon 600V CoolMOS™ CFD7 is Infineon’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS™ 7 series. CoolMOS™ CFD7 comes with reduced gate charge (Qg), improved turn-off behaviour and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market.
Ultra-fast body diode
Best-in-class reverse recovery charge (Qrr)
Improved reverse diode dv/dt and dif/dt ruggedness
Lowest FOM RDS(on) x Qg and Eoss
Best-in-class RDS(on)/package combinations
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