Infineon Type N-Channel MOSFET, 3 A, 600 V Enhancement, 5-Pin ThinPAK 5x6

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Subtotal (1 reel of 5000 units)*

Kr.18 360 00 

(exc. VAT)

Kr.22 950 00 

(inc. VAT)

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5000 +Kr. 3,672Kr. 18 360,00

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RS Stock No.:
217-2540
Mfr. Part No.:
IPL60R1K5C6SATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

3A

Maximum Drain Source Voltage Vds

600V

Package Type

ThinPAK 5x6

Mount Type

Surface

Pin Count

5

Maximum Drain Source Resistance Rds

1.5Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

36nC

Forward Voltage Vf

0.9V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

111W

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

150°C

Height

1.1mm

Standards/Approvals

No

Length

8.8mm

Width

8.8 mm

Automotive Standard

No

The Infineon new CoolMOS™ ThinPAK 5x6 is a leadless SMD package especially designed for high voltage MOSFETs. This new package has a very small footprint of 5x6mm 2 and a very low profile with only 1mm height. This significantly smaller package size in combination with its benchmark low parasitic inductances can be used as a new and effective way to decrease system solution size in power- density driven designs. The ThinPAK 5x6 package is characterized by a very low source inductance 1.6nH, as well as a similar thermal performance as DPAK. The package hence enables faster and thus more efficient switching of power MOSFETs and is easier to handle in terms of switching behaviour and EMI.

Small footprint (5x6mm²)

Low profile (1mm)

Low parasitic inductance

RoHS compliant

Halogen free mold compound

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