Infineon IPP60R Type N-Channel MOSFET, 35 A, 600 V Enhancement, 3-Pin TO-220 IPP60R060C7XKSA1

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 2 units)*

Kr.160 96 

(exc. VAT)

Kr.201 20 

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • Plus 956 unit(s) shipping from 29. desember 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
2 - 8Kr. 80,48Kr. 160,96
10 - 18Kr. 74,015Kr. 148,03
20 - 48Kr. 69,21Kr. 138,42
50 - 98Kr. 64,35Kr. 128,70
100 +Kr. 59,49Kr. 118,98

*price indicative

Packaging Options:
RS Stock No.:
222-4926
Mfr. Part No.:
IPP60R060C7XKSA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

35A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-220

Series

IPP60R

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

60mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

162W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

68nC

Forward Voltage Vf

0.9V

Maximum Operating Temperature

150°C

Length

10.36mm

Standards/Approvals

No

Height

9.45mm

Width

4.57 mm

Automotive Standard

No

The Infineon 600V CoolMOS™ C7 superjunction (SJ) MOSFET series offers a ∼50% reduction in turn-off losses (E oss ) compared to the CoolMOS™ CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. The IPL60R185C7 is also a perfect match for high-power-density charger designs.

Reduced switching loss parameters such as Q G, C oss, E oss

Best-in-class figure of merit Q G*R DS(on)

Increased switching frequency

Best R (on)*A in the world

Rugged body diode

Related links