Infineon IPP60R Type N-Channel MOSFET, 35 A, 600 V Enhancement, 3-Pin TO-220

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Subtotal (1 tube of 50 units)*

Kr.1 696 80 

(exc. VAT)

Kr.2 121 00 

(inc. VAT)

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  • Plus 950 unit(s) shipping from 29. desember 2025
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Units
Per unit
Per Tube*
50 +Kr. 33,936Kr. 1 696,80

*price indicative

RS Stock No.:
222-4925
Mfr. Part No.:
IPP60R060C7XKSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

35A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-220

Series

IPP60R

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

60mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

68nC

Maximum Power Dissipation Pd

162W

Forward Voltage Vf

0.9V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

9.45mm

Length

10.36mm

Width

4.57 mm

Automotive Standard

No

The Infineon 600V CoolMOS™ C7 superjunction (SJ) MOSFET series offers a ∼50% reduction in turn-off losses (E oss ) compared to the CoolMOS™ CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. The IPL60R185C7 is also a perfect match for high-power-density charger designs.

Reduced switching loss parameters such as Q G, C oss, E oss

Best-in-class figure of merit Q G*R DS(on)

Increased switching frequency

Best R (on)*A in the world

Rugged body diode

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