Infineon OptiMOS Type N-Channel MOSFET, 100 A, 55 V Enhancement, 3-Pin TO-263

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Subtotal (1 reel of 1000 units)*

Kr.21 534 00 

(exc. VAT)

Kr.26 918 00 

(inc. VAT)

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1000 +Kr. 21,534Kr. 21 534,00

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RS Stock No.:
223-8512
Mfr. Part No.:
IPB100N06S2L05ATMA2
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

100A

Maximum Drain Source Voltage Vds

55V

Package Type

TO-263

Series

OptiMOS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

4.4mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

300W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

0.9V

Typical Gate Charge Qg @ Vgs

19nC

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

AEC-Q101

The Infineon OptiMOS series N-channel MOSFET in D2-PAK package. It has benefits of highest current capability, lowest switching and conduction power losses for highest thermal efficiency and robust packages with superior quality and reliability.

Automotive AEC Q101 qualified

•MSL1 up to 260°C peak reflow

•175°C operating temperature

•Green package

•Ultra low Rds

•100% Avalanche tested

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