Infineon BSS123I Type N-Channel MOSFET, 190 mA, 100 V Depletion, 4-Pin SOT-223

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Subtotal (1 reel of 3000 units)*

Kr.1 311 00 

(exc. VAT)

Kr.1 638 00 

(inc. VAT)

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Units
Per unit
Per Reel*
3000 - 3000Kr. 0,437Kr. 1 311,00
6000 - 12000Kr. 0,416Kr. 1 248,00
15000 +Kr. 0,398Kr. 1 194,00

*price indicative

RS Stock No.:
225-0556
Mfr. Part No.:
BSS123IXTSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

190mA

Maximum Drain Source Voltage Vds

100V

Package Type

SOT-223

Series

BSS123I

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

10Ω

Channel Mode

Depletion

Maximum Power Dissipation Pd

0.5W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.1V

Typical Gate Charge Qg @ Vgs

0.63nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

1.8mm

Length

6.7mm

Standards/Approvals

No

Width

3.7 mm

Automotive Standard

No

The Infineon BSS123I is the small signal, small power N- and P-channel MOSFETs provide a wide range of VGS(th) levels and RDS(on) values, as well as multiple voltage classes. This MOSFET have enhancement and depletion-mode options.

PCB-space and cost savings

Gate drive flexibility

Reduced design complexity

Environmentally friendly

High overall efficiency

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