Infineon OptiMOS Type N-Channel MOSFET, 190 mA, 100 V Enhancement, 3-Pin SOT-23 BSS123NH6327XTSA1

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Subtotal (1 reel of 3000 units)*

Kr.1 782 00 

(exc. VAT)

Kr.2 226 00 

(inc. VAT)

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3000 +Kr. 0,594Kr. 1 782,00

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RS Stock No.:
165-5862
Mfr. Part No.:
BSS123NH6327XTSA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

190mA

Maximum Drain Source Voltage Vds

100V

Package Type

SOT-23

Series

OptiMOS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

10Ω

Channel Mode

Enhancement

Forward Voltage Vf

0.8V

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

0.6nC

Maximum Power Dissipation Pd

500mW

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Width

1.3 mm

Height

1mm

Length

2.9mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

RoHS Status: Not Applicable

COO (Country of Origin):
CN

Infineon OptiMOS™ Small Signal MOSFETs


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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