STMicroelectronics MDmesh DM6 Type N-Channel MOSFET, 72 A, 650 V Enhancement, 3-Pin TO-247 STWA68N65DM6AG
- RS Stock No.:
- 225-0679
- Mfr. Part No.:
- STWA68N65DM6AG
- Brand:
- STMicroelectronics
Bulk discount available
Subtotal (1 unit)*
Kr.89 23
(exc. VAT)
Kr.111 54
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- 533 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 9 | Kr. 89,23 |
| 10 - 99 | Kr. 86,72 |
| 100 - 249 | Kr. 84,54 |
| 250 - 499 | Kr. 82,37 |
| 500 + | Kr. 80,31 |
*price indicative
- RS Stock No.:
- 225-0679
- Mfr. Part No.:
- STWA68N65DM6AG
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 72A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | MDmesh DM6 | |
| Package Type | TO-247 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 39mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 118nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.6V | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Power Dissipation Pd | 480W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 40.92mm | |
| Height | 5.1mm | |
| Width | 15.8 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 72A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series MDmesh DM6 | ||
Package Type TO-247 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 39mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 118nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.6V | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Power Dissipation Pd 480W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 40.92mm | ||
Height 5.1mm | ||
Width 15.8 mm | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
Fast-recovery body diode
Lower RDS(on) per area vs previous generation
Low gate charge, input capacitance and resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected
629
Related links
- STMicroelectronics Dual N-Channel MOSFET 650 V, 3-Pin TO-247 STWA68N65DM6AG
- STMicroelectronics N-Channel MOSFET 650 V, 4-Pin TO-247-4 STW68N65DM6-4AG
- STMicroelectronics Dual N-Channel MOSFET 650 V, 7-Pin H2PAK-7 SCTH35N65G2V-7AG
- STMicroelectronics N-Channel MOSFET 600 V, 3-Pin TO-247 STWA75N60DM6
- STMicroelectronics N-Channel MOSFET 600 V, 3-Pin TO-247 STWA75N60M6
- Infineon N-Channel MOSFET 220 V PG-TO 263-3 IPB156N22NFDATMA1
- Wolfspeed SiC N-Channel MOSFET 1700 V, 3-Pin TO-247 C2M0045170D
- Infineon HEXFET Dual Silicon N-Channel MOSFET 200 V, 3-Pin TO-262 IRFSL4127PBF