STMicroelectronics MDmesh DM6 Type N-Channel MOSFET, 72 A, 650 V Enhancement, 3-Pin TO-247 STWA68N65DM6AG
- RS Stock No.:
- 225-0679
- Mfr. Part No.:
- STWA68N65DM6AG
- Brand:
- STMicroelectronics
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Subtotal (1 unit)*
Kr.89 23
(exc. VAT)
Kr.111 54
(inc. VAT)
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In Stock
- Plus 533 unit(s) shipping from 21. januar 2026
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Units | Per unit |
|---|---|
| 1 - 9 | Kr. 89,23 |
| 10 - 99 | Kr. 86,72 |
| 100 - 249 | Kr. 84,54 |
| 250 - 499 | Kr. 82,37 |
| 500 + | Kr. 80,31 |
*price indicative
- RS Stock No.:
- 225-0679
- Mfr. Part No.:
- STWA68N65DM6AG
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 72A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-247 | |
| Series | MDmesh DM6 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 39mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.6V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Typical Gate Charge Qg @ Vgs | 118nC | |
| Maximum Power Dissipation Pd | 480W | |
| Maximum Operating Temperature | 150°C | |
| Width | 15.8 mm | |
| Standards/Approvals | No | |
| Length | 40.92mm | |
| Height | 5.1mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 72A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-247 | ||
Series MDmesh DM6 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 39mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.6V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Typical Gate Charge Qg @ Vgs 118nC | ||
Maximum Power Dissipation Pd 480W | ||
Maximum Operating Temperature 150°C | ||
Width 15.8 mm | ||
Standards/Approvals No | ||
Length 40.92mm | ||
Height 5.1mm | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
Fast-recovery body diode
Lower RDS(on) per area vs previous generation
Low gate charge, input capacitance and resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected
629
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