Vishay N-Channel 100 V Type N-Channel MOSFET, 110 A, 100 V, 8-Pin SO-8

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Subtotal (1 reel of 3000 units)*

Kr.34 596 00 

(exc. VAT)

Kr.43 245 00 

(inc. VAT)

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  • 3 000 unit(s) shipping from 29. desember 2025
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Units
Per unit
Per Reel*
3000 +Kr. 11,532Kr. 34 596,00

*price indicative

RS Stock No.:
225-9925
Mfr. Part No.:
SIR5102DP-T1-RE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

110A

Maximum Drain Source Voltage Vds

100V

Series

N-Channel 100 V

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

5.6mΩ

Forward Voltage Vf

1.1V

Maximum Power Dissipation Pd

6.25W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

51nC

Maximum Operating Temperature

150°C

Width

1.12 mm

Height

5.26mm

Length

6.25mm

Standards/Approvals

No

Automotive Standard

No

The Vishay Siliconix maintains Reliability data for Semiconductor Technology and Package Reliability represent a composite of all qualified locations.

TrenchFET Gen IV power MOSFET

Very low RDS x Qg figure-of-merit (FOM)

Tuned for the lowest RDS x Qoss FOM

100 % Rg and UIS tested

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