Vishay N-Channel 80 V Type N-Channel MOSFET, 137.5 A, 80 V, 8-Pin SO-8 SIR5802DP-T1-RE3
- RS Stock No.:
- 225-9932
- Mfr. Part No.:
- SIR5802DP-T1-RE3
- Brand:
- Vishay
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Subtotal (1 pack of 5 units)*
Kr.133 62
(exc. VAT)
Kr.167 025
(inc. VAT)
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In Stock
- Plus 5 990 unit(s) shipping from 29. desember 2025
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | Kr. 26,724 | Kr. 133,62 |
| 50 - 120 | Kr. 24,07 | Kr. 120,35 |
| 125 - 245 | Kr. 21,392 | Kr. 106,96 |
| 250 - 495 | Kr. 20,042 | Kr. 100,21 |
| 500 + | Kr. 18,716 | Kr. 93,58 |
*price indicative
- RS Stock No.:
- 225-9932
- Mfr. Part No.:
- SIR5802DP-T1-RE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 137.5A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | N-Channel 80 V | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 4mΩ | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 60nC | |
| Forward Voltage Vf | 1.1V | |
| Maximum Power Dissipation Pd | 104W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 5.26mm | |
| Length | 6.25mm | |
| Width | 1.12 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 137.5A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series N-Channel 80 V | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 4mΩ | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 60nC | ||
Forward Voltage Vf 1.1V | ||
Maximum Power Dissipation Pd 104W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 5.26mm | ||
Length 6.25mm | ||
Width 1.12 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay Siliconix maintains Reliability data for Semiconductor Technology and Package Reliability represent a composite of all qualified locations.
TrenchFET Gen IV power MOSFET
Very low RDS x Qg figure-of-merit (FOM)
Tuned for the lowest RDS x Qoss FOM
100 % Rg and UIS tested
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