Vishay N-Channel 80 V Type N-Channel MOSFET, 137.5 A, 80 V, 8-Pin SO-8 SIR5802DP-T1-RE3

Bulk discount available

Subtotal (1 pack of 5 units)*

Kr. 144,83

(exc. VAT)

Kr. 181,04

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • Plus 5 990 unit(s) shipping from 11 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units
Per unit
Per Pack*
5 - 45Kr. 28,966Kr. 144,83
50 - 120Kr. 26,106Kr. 130,53
125 - 245Kr. 23,20Kr. 116,00
250 - 495Kr. 21,736Kr. 108,68
500 +Kr. 20,294Kr. 101,47

*price indicative

Packaging Options:
RS Stock No.:
225-9932
Mfr. Part No.:
SIR5802DP-T1-RE3
Brand:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

137.5A

Maximum Drain Source Voltage Vds

80V

Package Type

SO-8

Series

N-Channel 80 V

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

4mΩ

Maximum Power Dissipation Pd

104W

Forward Voltage Vf

1.1V

Typical Gate Charge Qg @ Vgs

60nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

5.26mm

Length

6.25mm

Standards/Approvals

No

Automotive Standard

No

The Vishay Siliconix maintains Reliability data for Semiconductor Technology and Package Reliability represent a composite of all qualified locations.

TrenchFET Gen IV power MOSFET

Very low RDS x Qg figure-of-merit (FOM)

Tuned for the lowest RDS x Qoss FOM

100 % Rg and UIS tested

Related links