Vishay N-Channel 80 V Type N-Channel MOSFET, 137.5 A, 80 V, 8-Pin SO-8

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Subtotal (1 reel of 3000 units)*

Kr.25 023 00 

(exc. VAT)

Kr.31 278 00 

(inc. VAT)

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Units
Per unit
Per Reel*
3000 +Kr. 8,341Kr. 25 023,00

*price indicative

RS Stock No.:
225-9931
Mfr. Part No.:
SIR5802DP-T1-RE3
Brand:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

137.5A

Maximum Drain Source Voltage Vds

80V

Series

N-Channel 80 V

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

4mΩ

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

60nC

Maximum Power Dissipation Pd

104W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.1V

Maximum Operating Temperature

150°C

Width

1.12 mm

Length

6.25mm

Height

5.26mm

Standards/Approvals

No

Automotive Standard

No

The Vishay Siliconix maintains Reliability data for Semiconductor Technology and Package Reliability represent a composite of all qualified locations.

TrenchFET Gen IV power MOSFET

Very low RDS x Qg figure-of-merit (FOM)

Tuned for the lowest RDS x Qoss FOM

100 % Rg and UIS tested

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