Vishay TrenchFET Type P-Channel MOSFET, 12.5 A, 20 V Enhancement, 8-Pin TSSOP Si6423ADQ-T1-GE3
- RS Stock No.:
- 228-2823
- Mfr. Part No.:
- Si6423ADQ-T1-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 pack of 10 units)*
Kr.87 63
(exc. VAT)
Kr.109 54
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 5 530 unit(s) shipping from 29. desember 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | Kr. 8,763 | Kr. 87,63 |
| 100 - 240 | Kr. 8,317 | Kr. 83,17 |
| 250 - 490 | Kr. 6,589 | Kr. 65,89 |
| 500 - 990 | Kr. 6,132 | Kr. 61,32 |
| 1000 + | Kr. 4,828 | Kr. 48,28 |
*price indicative
- RS Stock No.:
- 228-2823
- Mfr. Part No.:
- Si6423ADQ-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 12.5A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | TrenchFET | |
| Package Type | TSSOP | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 9.8mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Maximum Power Dissipation Pd | 2.2W | |
| Typical Gate Charge Qg @ Vgs | 112nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.2mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 12.5A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series TrenchFET | ||
Package Type TSSOP | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 9.8mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Maximum Power Dissipation Pd 2.2W | ||
Typical Gate Charge Qg @ Vgs 112nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 1.2mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay TrenchFET P-Channel power MOSFET is use for load switch, battery switch and power management.
100 % Rg and UIS tested
Related links
- Vishay TrenchFET Dual P-Channel MOSFET 20 V, 8-Pin TSSOP Si6423ADQ-T1-GE3
- Vishay TrenchFET Dual P-Channel MOSFET 80 V, 6-Pin TSOP-6 Si3129DV-T1-GE3
- Vishay TrenchFET Dual P-Channel MOSFET 80 V, 3-Pin SOT-23 Si2387DS-T1-GE3
- Vishay TrenchFET Dual P-Channel MOSFET 80 V, 8-Pin PowerPAK SO-8 SiR681DP-T1-RE3
- Vishay TrenchFET Dual P-Channel MOSFET 80 V, 8-Pin PowerPAK SO-8 SI7469ADP-T1-RE3
- Vishay TrenchFET Dual N/P-Channel MOSFET3.9 A 8-Pin SO-8 SI4559ADY-T1-E3
- Vishay TrenchFET Dual N/P-Channel MOSFET 100 V, 8-Pin PowerPAK 1212-8 Dual SiS590DN-T1-GE3
- Vishay TrenchFET Dual N/P-Channel MOSFET 2.1 A 6-Pin TSOP-6 SI3585CDV-T1-GE3
