Vishay E Type N-Channel MOSFET, 32 A, 650 V Enhancement, 4-Pin PowerPAK SiHH080N60E-T1-GE3

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Subtotal (1 pack of 2 units)*

Kr.114 74 

(exc. VAT)

Kr.143 42 

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 18Kr. 57,37Kr. 114,74
20 - 48Kr. 47,65Kr. 95,30
50 - 98Kr. 44,73Kr. 89,46
100 - 198Kr. 42,50Kr. 85,00
200 +Kr. 34,375Kr. 68,75

*price indicative

Packaging Options:
RS Stock No.:
228-2873
Mfr. Part No.:
SiHH080N60E-T1-GE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

32A

Maximum Drain Source Voltage Vds

650V

Package Type

PowerPAK

Series

E

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

80mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

184W

Typical Gate Charge Qg @ Vgs

42nC

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay E Series Power MOSFET reduced switching and conduction losses.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

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