Vishay TrenchFET Type N-Channel MOSFET, 77.4 A, 150 V Enhancement, 8-Pin SO-8 SiR570DP-T1-RE3

Subtotal (1 pack of 5 units)*

Kr.167 60 

(exc. VAT)

Kr.209 50 

(inc. VAT)

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Per unit
Per Pack*
5 +Kr. 33,52Kr. 167,60

*price indicative

Packaging Options:
RS Stock No.:
228-2906
Mfr. Part No.:
SiR570DP-T1-RE3
Brand:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

77.4A

Maximum Drain Source Voltage Vds

150V

Package Type

SO-8

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

7.9mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

104W

Typical Gate Charge Qg @ Vgs

46.9nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay TrenchFET N-channel is 150 V MOSFET.

100 % Rg and UIS tested

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