Vishay TrenchFET Type P-Channel MOSFET, 71.9 A, 80 V Enhancement, 8-Pin SO-8 SiR681DP-T1-RE3

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 5 units)*

Kr.178 12 

(exc. VAT)

Kr.222 65 

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • Plus 5 940 unit(s) shipping from 29. desember 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
5 - 45Kr. 35,624Kr. 178,12
50 - 120Kr. 30,316Kr. 151,58
125 - 245Kr. 28,508Kr. 142,54
250 - 495Kr. 26,77Kr. 133,85
500 +Kr. 23,20Kr. 116,00

*price indicative

Packaging Options:
RS Stock No.:
228-2910
Mfr. Part No.:
SiR681DP-T1-RE3
Brand:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

71.9A

Maximum Drain Source Voltage Vds

80V

Series

TrenchFET

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

11.2mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

69.4nC

Maximum Power Dissipation Pd

104W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay TrenchFET P-channel is 80 V MOSFET.

100 % Rg and UIS tested

Related links