Vishay Dual TrenchFET 2 N-Channel MOSFET, 257 A, 30 V Enhancement, 8-Pin PowerPAIR 6 x 5F SiZF906BDT-T1-GE3

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Subtotal (1 pack of 5 units)*

Kr. 163,82

(exc. VAT)

Kr. 204,77

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 45Kr. 32,764Kr. 163,82
50 - 120Kr. 27,844Kr. 139,22
125 - 245Kr. 26,198Kr. 130,99
250 - 495Kr. 24,596Kr. 122,98
500 +Kr. 22,948Kr. 114,74

*price indicative

Packaging Options:
RS Stock No.:
228-2941
Mfr. Part No.:
SiZF906BDT-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

257A

Maximum Drain Source Voltage Vds

30V

Package Type

PowerPAIR 6 x 5F

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0021Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

25nC

Maximum Power Dissipation Pd

83W

Maximum Gate Source Voltage Vgs

20V

Transistor Configuration

Dual

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Number of Elements per Chip

2

Automotive Standard

No

The Vishay Dual N-Channel 30 V (D-S) MOSFET.

100 % Rg and UIS tested

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