STMicroelectronics Type N-Channel MOSFET, 46 A, 600 V Enhancement, 8-Pin TO-LL
- RS Stock No.:
- 228-3053P
- Mfr. Part No.:
- STO65N60DM6
- Brand:
- STMicroelectronics
Subtotal 2 units (supplied on a continuous strip)*
Kr.124 74
(exc. VAT)
Kr.155 92
(inc. VAT)
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In Stock
- 466 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 2 + | Kr. 62,37 |
*price indicative
- RS Stock No.:
- 228-3053P
- Mfr. Part No.:
- STO65N60DM6
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 46A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-LL | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 76mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 65.2nC | |
| Maximum Power Dissipation Pd | 320W | |
| Forward Voltage Vf | 1.6V | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 46A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-LL | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 76mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 65.2nC | ||
Maximum Power Dissipation Pd 320W | ||
Forward Voltage Vf 1.6V | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The STMicroelectronics high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
Fast-recovery body diode
Lower RDS(on) per area vs previous generation
Low gate charge, input capacitance and resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected
Excellent switching performance thanks to the extra driving source pin