Infineon Dual HEXFET 2 Type N-Channel MOSFET, 70 A, 40 V Enhancement, 8-Pin PQFN

Subtotal (1 reel of 4000 units)*

Kr.43 372 00 

(exc. VAT)

Kr.54 216 00 

(inc. VAT)

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4000 +Kr. 10,843Kr. 43 372,00

*price indicative

RS Stock No.:
229-1739
Mfr. Part No.:
AUIRFN8459TR
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

70A

Maximum Drain Source Voltage Vds

40V

Series

HEXFET

Package Type

PQFN

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

5.9mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

40nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.3V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

50W

Transistor Configuration

Dual

Maximum Operating Temperature

175°C

Standards/Approvals

No

Height

1.2mm

Width

5.85 mm

Length

5mm

Number of Elements per Chip

2

Automotive Standard

AEC-Q101

The Infineon dual n channel HEXFET power MOSFET in a PQFN 5 x 6 L package allows repetitive avalanche up to Tjmax. It has fast switching speed and it is lead free.

It is RoHS compliant

It has 175°C operating temperature

It has ultra low on resistance

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