Infineon IPZ Type N-Channel MOSFET, 20 A, 40 V Enhancement, 8-Pin PQFN IPZ40N04S53R1ATMA1
- RS Stock No.:
- 229-1850
- Mfr. Part No.:
- IPZ40N04S53R1ATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 10 units)*
Kr.88 14
(exc. VAT)
Kr.110 18
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- 24 870 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | Kr. 8,814 | Kr. 88,14 |
| 100 - 240 | Kr. 8,374 | Kr. 83,74 |
| 250 - 490 | Kr. 8,019 | Kr. 80,19 |
| 500 - 990 | Kr. 7,665 | Kr. 76,65 |
| 1000 + | Kr. 7,139 | Kr. 71,39 |
*price indicative
- RS Stock No.:
- 229-1850
- Mfr. Part No.:
- IPZ40N04S53R1ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | IPZ | |
| Package Type | PQFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3.1mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 71W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 31nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 175°C | |
| Width | 3.3 mm | |
| Height | 1.05mm | |
| Standards/Approvals | RoHS | |
| Length | 3.3mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series IPZ | ||
Package Type PQFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3.1mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 71W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 31nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 175°C | ||
Width 3.3 mm | ||
Height 1.05mm | ||
Standards/Approvals RoHS | ||
Length 3.3mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon n channel normal level power MOSFET used for automotive applications. It has 175°C operating temperature and 100 percent avalanche tested.
It is RoHS compliant and AEC Q101 qualified
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