onsemi SiC Power Type N-Channel MOSFET, 62 A, 650 V N, 7-Pin TO-263
- RS Stock No.:
- 229-6443
- Mfr. Part No.:
- NTBG045N065SC1
- Brand:
- onsemi
Subtotal (1 reel of 800 units)*
Kr. 61 940,80
(exc. VAT)
Kr. 77 425,60
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Reel* |
|---|---|---|
| 800 + | Kr. 77,426 | Kr. 61 940,80 |
*price indicative
- RS Stock No.:
- 229-6443
- Mfr. Part No.:
- NTBG045N065SC1
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 62A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | SiC Power | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 50mΩ | |
| Channel Mode | N | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 105nC | |
| Forward Voltage Vf | 4.8V | |
| Maximum Power Dissipation Pd | 242W | |
| Maximum Operating Temperature | 175°C | |
| Height | 9.4mm | |
| Standards/Approvals | No | |
| Length | 10.2mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 62A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series SiC Power | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 50mΩ | ||
Channel Mode N | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 105nC | ||
Forward Voltage Vf 4.8V | ||
Maximum Power Dissipation Pd 242W | ||
Maximum Operating Temperature 175°C | ||
Height 9.4mm | ||
Standards/Approvals No | ||
Length 10.2mm | ||
Automotive Standard No | ||
The ON Semiconductor SiC Power series MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge.
Highest efficiency
Faster operation frequency
Increased power density
Reduced EMI
Reduced system size
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