onsemi SiC Power N-Channel MOSFET, 142 A, 650 V N, 4-Pin TO-247 NTH4L015N065SC1
- RS Stock No.:
- 229-6457
- Mfr. Part No.:
- NTH4L015N065SC1
- Brand:
- onsemi
Subtotal (1 tube of 450 units)*
Kr. 95 071,95
(exc. VAT)
Kr. 118 840,05
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Tube* |
|---|---|---|
| 450 + | Kr. 211,271 | Kr. 95 071,95 |
*price indicative
- RS Stock No.:
- 229-6457
- Mfr. Part No.:
- NTH4L015N065SC1
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 142A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | SiC Power | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 12mΩ | |
| Channel Mode | N | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 500W | |
| Typical Gate Charge Qg @ Vgs | 283nC | |
| Maximum Gate Source Voltage Vgs | 22V | |
| Forward Voltage Vf | 4.8V | |
| Maximum Operating Temperature | 175°C | |
| Length | 15.8mm | |
| Width | 5.2mm | |
| Standards/Approvals | No | |
| Height | 22.74mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 142A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series SiC Power | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 12mΩ | ||
Channel Mode N | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 500W | ||
Typical Gate Charge Qg @ Vgs 283nC | ||
Maximum Gate Source Voltage Vgs 22V | ||
Forward Voltage Vf 4.8V | ||
Maximum Operating Temperature 175°C | ||
Length 15.8mm | ||
Width 5.2mm | ||
Standards/Approvals No | ||
Height 22.74mm | ||
Automotive Standard No | ||
The ON Semiconductor SiC Power series MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge.
Highest efficiency
Faster operation frequency
Increased power density
Reduced EMI
Reduced system size
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