Infineon OptiMOS 5 Type N-Channel MOSFET, 66 A, 80 V, 8-Pin SO-8

View all MOSFETs

Subtotal (1 reel of 5000 units)*

Kr.27 840 00 

(exc. VAT)

Kr.34 800 00 

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 25. mai 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
5000 +Kr. 5,568Kr. 27 840,00

*price indicative

RS Stock No.:
232-6748
Mfr. Part No.:
ISC0602NLSATMA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

66A

Maximum Drain Source Voltage Vds

80V

Series

OptiMOS 5

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

9.5mΩ

Maximum Power Dissipation Pd

60W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

22nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Length

6.1mm

Height

5.35mm

Width

1.2 mm

Standards/Approvals

No

Automotive Standard

No

The Infineon's OptiMOS PD power MOSFET 80 V, are designed targeting USB-PD and adapter applications. It's SuperSO8 package offers fast ramp-up and optimized lead times. OptiMOS low-voltage MOSFETs for power delivery enable designs with less parts leading to BOM cost reduction. OptiMOS PD features quality products in compact, lightweight packages.

Logic level availability

Excellent thermal behaviour

100% avalanche tested

Related links