Infineon OptiMOS 5 Type N-Channel MOSFET, 97 A, 100 V, 8-Pin SO-8 ISC0806NLSATMA1

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Subtotal (1 pack of 2 units)*

Kr.52 55 

(exc. VAT)

Kr.65 688 

(inc. VAT)

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2 +Kr. 26,275Kr. 52,55

*price indicative

Packaging Options:
RS Stock No.:
232-6767
Mfr. Part No.:
ISC0806NLSATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

97A

Maximum Drain Source Voltage Vds

100V

Package Type

SO-8

Series

OptiMOS 5

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

7.1mΩ

Maximum Power Dissipation Pd

96W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

49nC

Forward Voltage Vf

1.1V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

6.1mm

Width

1.2 mm

Height

5.35mm

Automotive Standard

No

The Infineon's OptiMOS PD power MOSFET 100 V, are designed targeting USB-PD and adapter applications. It's SuperSO8 package offers fast ramp-up and optimized lead times. OptiMOS low-voltage MOSFETs for power delivery enable designs with less parts leading to BOM cost reduction. OptiMOS PD features quality products in compact, lightweight packages.

Logic level availability

Excellent thermal behaviour

100% avalanche tested

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