Infineon OptiMOS 5 Type N-Channel MOSFET, 64 A, 80 V, 8-Pin PQFN ISZ0602NLSATMA1
- RS Stock No.:
- 232-6769
- Mfr. Part No.:
- ISZ0602NLSATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 5 units)*
Kr.87 67
(exc. VAT)
Kr.109 59
(inc. VAT)
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In Stock
- Plus 4 695 unit(s) shipping from 29. desember 2025
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | Kr. 17,534 | Kr. 87,67 |
| 50 - 120 | Kr. 15,788 | Kr. 78,94 |
| 125 - 245 | Kr. 14,734 | Kr. 73,67 |
| 250 - 495 | Kr. 13,682 | Kr. 68,41 |
| 500 + | Kr. 12,606 | Kr. 63,03 |
*price indicative
- RS Stock No.:
- 232-6769
- Mfr. Part No.:
- ISZ0602NLSATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 64A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | PQFN | |
| Series | OptiMOS 5 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 9.9mΩ | |
| Forward Voltage Vf | 1V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 60W | |
| Typical Gate Charge Qg @ Vgs | 29nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 3.4mm | |
| Width | 1.1 mm | |
| Length | 3.4mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 64A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type PQFN | ||
Series OptiMOS 5 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 9.9mΩ | ||
Forward Voltage Vf 1V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 60W | ||
Typical Gate Charge Qg @ Vgs 29nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 3.4mm | ||
Width 1.1 mm | ||
Length 3.4mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon's OptiMOS PD power MOSFET 80 V, are designed targeting USB-PD and adapter applications. It's PQFN 3.3x3.3 package offers fast ramp-up and optimized lead times. OptiMOS low-voltage MOSFETs for power delivery enable designs with less parts leading to BOM cost reduction. OptiMOS PD features quality products in compact, lightweight packages.
Logic level availability
Excellent thermal behaviour
100% avalanche tested
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