Infineon OptiMOS 5 Type N-Channel MOSFET, 40 A, 80 V N, 8-Pin PQFN BSZ110N08NS5ATMA1
- RS Stock No.:
- 214-4345
- Mfr. Part No.:
- BSZ110N08NS5ATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 20 units)*
Kr.202 20
(exc. VAT)
Kr.252 80
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 13 700 unit(s) shipping from 29. desember 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 80 | Kr. 10,11 | Kr. 202,20 |
| 100 - 180 | Kr. 9,61 | Kr. 192,20 |
| 200 - 480 | Kr. 9,198 | Kr. 183,96 |
| 500 - 980 | Kr. 8,798 | Kr. 175,96 |
| 1000 + | Kr. 8,191 | Kr. 163,82 |
*price indicative
- RS Stock No.:
- 214-4345
- Mfr. Part No.:
- BSZ110N08NS5ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | OptiMOS 5 | |
| Package Type | PQFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 11mΩ | |
| Channel Mode | N | |
| Maximum Power Dissipation Pd | 50W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 15nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 1.1mm | |
| Length | 3.4mm | |
| Width | 3.4 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series OptiMOS 5 | ||
Package Type PQFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 11mΩ | ||
Channel Mode N | ||
Maximum Power Dissipation Pd 50W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 15nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 1.1mm | ||
Length 3.4mm | ||
Width 3.4 mm | ||
Automotive Standard No | ||
The 600V Cool MOS P7 super junction MOSFET continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the Cool MOS™ 7th generation platform ensure its high efficiency.
It has rugged body diode
Integrated RG reduces MOSFET oscillation sensitivity
Related links
- Infineon OptiMOS™ 5 N-Channel MOSFET 80 V, 8-Pin PQFN 3 x 3 BSZ110N08NS5ATMA1
- Infineon OptiMOS™ 5 N-Channel MOSFET 80 V, 8-Pin PQFN 3 x 3 BSZ070N08LS5ATMA1
- Infineon N-Channel MOSFET 80 V, 8-Pin PQFN 3 x 3 IQE050N08NM5ATMA1
- Infineon N-Channel MOSFET 80 V, 8-Pin PQFN 3 x 3 IQE050N08NM5CGATMA1
- Infineon OptiMOS™ 5 Silicon N-Channel MOSFET 100 V, 8-Pin PQFN 3 x 3 IAUZ40N10S5N130ATMA1
- Infineon OptiMOS™ 5 N-Channel MOSFET 80 V, 8-Pin PQFN 3 x 3 ISZ0602NLSATMA1
- Infineon N-Channel MOSFET 40 V, 8-Pin PQFN 3 x 3 IPZ40N04S58R4ATMA1
- Infineon OptiMOS™ 3 Silicon N-Channel MOSFET 100 V, 8-Pin PQFN 3 x 3 BSZ150N10LS3GATMA1