Infineon OptiMOS 5 Type N-Channel MOSFET, 40 A, 80 V N, 8-Pin PQFN

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Subtotal (1 reel of 5000 units)*

Kr.34 925 00 

(exc. VAT)

Kr.43 655 00 

(inc. VAT)

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Units
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Per Reel*
5000 +Kr. 6,985Kr. 34 925,00

*price indicative

RS Stock No.:
214-4340
Mfr. Part No.:
BSZ070N08LS5ATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

40A

Maximum Drain Source Voltage Vds

80V

Package Type

PQFN

Series

OptiMOS 5

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

9.4mΩ

Channel Mode

N

Typical Gate Charge Qg @ Vgs

14.1nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

69W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Height

1.1mm

Standards/Approvals

No

Width

3.4 mm

Length

3.4mm

Automotive Standard

No

OptiMOS™ 5 power MOSFETs logic level provide low RDS(on) in a small package


Infineon's OptiMOS™ 5 power MOSFETs logic level are highly suitable for wireless charging, adapter and telecom applications. The devices' low gate charge (Q g) reduces switching losses without compromising conduction losses. The improved figues of merit allow operations at high switching frequencies. Furthermore, the logic level drive provides a low gate threshold voltage (V GS(th)) allowing the MOSFETs to be driven at 5V and directly from microcontrollers.

Summary of Features


  • Low R DS(on) in small package

  • Low gate charge

  • Lower output charge

  • Logic level compatibility

    • Benefits


  • Higher power density designs

  • Higher switching frequency

  • Reduced parts count wherever 5V supplies are available

  • Driven directly from microcontrollers (slow switching)

  • System cost reduction

    • Potential Applications


  • Wireless charging

  • Adapter

  • Telecom

    • Related links