Infineon OptiMOS 5 Type N-Channel MOSFET, 56 A, 60 V, 8-Pin PQFN ISZ0703NLSATMA1
- RS Stock No.:
- 232-6774
- Mfr. Part No.:
- ISZ0703NLSATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 5 units)*
Kr.84 84
(exc. VAT)
Kr.106 05
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- 4 980 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | Kr. 16,968 | Kr. 84,84 |
| 50 - 120 | Kr. 15,238 | Kr. 76,19 |
| 125 - 245 | Kr. 14,254 | Kr. 71,27 |
| 250 - 495 | Kr. 13,27 | Kr. 66,35 |
| 500 + | Kr. 12,196 | Kr. 60,98 |
*price indicative
- RS Stock No.:
- 232-6774
- Mfr. Part No.:
- ISZ0703NLSATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 56A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | OptiMOS 5 | |
| Package Type | PQFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 9.2mΩ | |
| Typical Gate Charge Qg @ Vgs | 23nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Maximum Power Dissipation Pd | 44W | |
| Maximum Operating Temperature | 175°C | |
| Length | 3.4mm | |
| Width | 1.1 mm | |
| Height | 3.4mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 56A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series OptiMOS 5 | ||
Package Type PQFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 9.2mΩ | ||
Typical Gate Charge Qg @ Vgs 23nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Maximum Power Dissipation Pd 44W | ||
Maximum Operating Temperature 175°C | ||
Length 3.4mm | ||
Width 1.1 mm | ||
Height 3.4mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon's OptiMOS PD power MOSFET 60 V, are designed targeting USB-PD and adapter applications. The products offer fast ramp-up and optimized lead times. OptiMOS low-voltage MOSFETs for power delivery enable designs with less parts leading to BOM cost reduction. OptiMOS PD features quality products in compact, lightweight packages.
Logic level availability
Excellent thermal behaviour
100% avalanche tested
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