STMicroelectronics SCTWA70N120G2V-4 Type N-Channel MOSFET, 91 A, 1200 V Enhancement, 4-Pin Hip-247

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Subtotal 10 units (supplied in a tube)*

Kr. 4 111,50

(exc. VAT)

Kr. 5 139,40

(inc. VAT)

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Units
Per unit
10 +Kr. 411,15

*price indicative

Packaging Options:
RS Stock No.:
233-0475P
Mfr. Part No.:
SCTWA70N120G2V-4
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

91A

Maximum Drain Source Voltage Vds

1200V

Package Type

Hip-247

Series

SCTWA70N120G2V-4

Mount Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance Rds

30mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

2.7V

Maximum Power Dissipation Pd

547W

Typical Gate Charge Qg @ Vgs

150nC

Maximum Operating Temperature

200°C

Length

34.8mm

Standards/Approvals

No

Height

5mm

Automotive Standard

No

The STMicroelectronics silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.

Very fast and robust intrinsic body diode

Extremely low gate charge and input capacitance

Very high operating junction temperature capability (TJ = 200 °C)

Source sensing pin for increased efficiency

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