Infineon BSC Type N-Channel MOSFET, 114 A, 150 V N, 8-Pin SuperSO8 5 x 6 BSC074N15NS5ATMA1
- RS Stock No.:
- 234-6989
- Mfr. Part No.:
- BSC074N15NS5ATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 2 units)*
Kr.118 54
(exc. VAT)
Kr.148 18
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 4 926 unit(s) shipping from 29. desember 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | Kr. 59,27 | Kr. 118,54 |
| 10 - 18 | Kr. 52,225 | Kr. 104,45 |
| 20 - 48 | Kr. 48,62 | Kr. 97,24 |
| 50 - 98 | Kr. 45,705 | Kr. 91,41 |
| 100 + | Kr. 42,10 | Kr. 84,20 |
*price indicative
- RS Stock No.:
- 234-6989
- Mfr. Part No.:
- BSC074N15NS5ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 114A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | SuperSO8 5 x 6 | |
| Series | BSC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 9.2mΩ | |
| Channel Mode | N | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 10nC | |
| Maximum Power Dissipation Pd | 46W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 5.35mm | |
| Height | 1.2mm | |
| Standards/Approvals | No | |
| Width | 6.1 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 114A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type SuperSO8 5 x 6 | ||
Series BSC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 9.2mΩ | ||
Channel Mode N | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 10nC | ||
Maximum Power Dissipation Pd 46W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Length 5.35mm | ||
Height 1.2mm | ||
Standards/Approvals No | ||
Width 6.1 mm | ||
Automotive Standard No | ||
The Infineon OptiMOS™ N- channel MOSFETs in SuperSO8 package extend OptiMOS™ 3 and 5 product portfolio and enable higher power density in addition to improved robustness, responding to the need for lower system cost and increased performance. The low reverse recovery charge (Qrr) improves the system reliability by providing a significant reduction of voltage overshoot, which minimizes the need for snubber circuits, resulting in less engineering cost and effort. It has 114A maximum continuous drain current and 150V maximum drain source voltage. It is Ideal for high-frequency switching and synchronous rectification.
Lowest RDS(on) enables highest power density and efficiency
Higher operating temperature rating to 175°C for increased reliability
Low RthJC for excellent thermal behaviour
Lower reverse recovery charge (Qrr)
Very low on-resistance RDS(on)
Very low reverse recovery charge(Qrr)
Pb-free lead plating
RoHS compliant
Related links
- Infineon N-Channel MOSFET 150 V, 8-Pin SuperSO8 5 x 6 BSC074N15NS5ATMA1
- Infineon N-Channel MOSFET 100 V, 8-Pin SuperSO8 5 x 6 BSC050N10NS5ATMA1
- Infineon OptiMOS™ 5 N-Channel MOSFET 150 V, 8-Pin SuperSO8 5 x 6 BSC093N15NS5ATMA1
- Infineon N-Channel MOSFET 40 V, 8-Pin SuperSO8 5 x 6 IAUC45N04S6N070HATMA1
- Infineon N-Channel MOSFET Transistor 40 V, 8-Pin SuperSO8 5 x 6 IPZ40N04S5L2R8ATMA1
- Infineon N-Channel MOSFET 25 V, 8-Pin SuperSO8 5 x 6 BSZ017NE2LS5IATMA1
- Infineon N-Channel MOSFET 25 V, 8-Pin SuperSO8 5 x 6 BSZ033NE2LS5ATMA1
- Infineon N-Channel MOSFET 20 V, 8-Pin SuperSO8 5 x 6 IAUC100N10S5L040ATMA1