Infineon Isolated F4 Type N-Channel MOSFET, 25 A, 1200 V, 2-Pin AG-EASY2B F445MR12W1M1B76BPSA1

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Subtotal (1 tray of 24 units)*

Kr.19 436 40 

(exc. VAT)

Kr.24 295 44 

(inc. VAT)

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Units
Per unit
Per Tray*
24 - 24Kr. 809,85Kr. 19 436,40
48 - 48Kr. 769,354Kr. 18 464,50
72 +Kr. 731,297Kr. 17 551,13

*price indicative

RS Stock No.:
234-8967
Mfr. Part No.:
F445MR12W1M1B76BPSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

25A

Maximum Drain Source Voltage Vds

1200V

Package Type

AG-EASY2B

Series

F4

Pin Count

2

Maximum Drain Source Resistance Rds

45mΩ

Minimum Operating Temperature

-40°C

Typical Gate Charge Qg @ Vgs

0.062μC

Forward Voltage Vf

5.65V

Maximum Power Dissipation Pd

20mW

Maximum Gate Source Voltage Vgs

15 V

Maximum Operating Temperature

150°C

Transistor Configuration

Isolated

Standards/Approvals

60749 and 60068, IEC 60747

Height

16.4mm

Length

62.8mm

Width

33.8 mm

Automotive Standard

No

The Infineon IGBT module has a 4 N-Channel (Half Bridge) FET Type works with 1200V Drain to Source Voltage and 75A continuous drain current.

Chassis mount

-40°C to 150°C operating temperature

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