Infineon IPP Type P-Channel MOSFET, 62 A, 100 V Enhancement, 3-Pin TO-220 IPP330P10NMAKSA1

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Subtotal (1 tube of 50 units)*

Kr.1 601 95 

(exc. VAT)

Kr.2 002 45 

(inc. VAT)

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Units
Per unit
Per Tube*
50 - 50Kr. 32,039Kr. 1 601,95
100 - 200Kr. 28,835Kr. 1 441,75
250 +Kr. 27,233Kr. 1 361,65

*price indicative

RS Stock No.:
235-4860
Mfr. Part No.:
IPP330P10NMAKSA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

62A

Maximum Drain Source Voltage Vds

100V

Series

IPP

Package Type

TO-220

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

33mΩ

Channel Mode

Enhancement

Forward Voltage Vf

-1.2V

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

-189nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

300W

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

10.36mm

Height

4.57mm

Width

15.95 mm

Automotive Standard

No

The Infineon OptiMOS™ P-Channel MOSFETs 100V in TO-220 package represents the new technology targeted for battery management, load switch and reverse polarity protection applications. The main advantage of a P-channel device is the reduction of design complexity in medium and low power applications. Its easy Interface to MCU, fast switching as well as avalanche ruggedness makes it suitable for high quality demanding applications. It is available in normal level featuring a wide RDS(on) range and improves efficiency at low loads due to low Qg. It is used in Battery management, Industrial automation.

Ideal for high and low switching frequency

Avalanche ruggedness

Industry standard footprint surface mount package

Robust, reliable performance

Increased security of supply

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