Infineon ISP Type P-Channel MOSFET, 1.55 A, 100 V Enhancement, 3-Pin SOT-223 ISP98DP10LMXTSA1

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Subtotal (1 pack of 10 units)*

Kr.18 06 

(exc. VAT)

Kr.22 58 

(inc. VAT)

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10 +Kr. 1,806Kr. 18,06

*price indicative

Packaging Options:
RS Stock No.:
235-4881
Mfr. Part No.:
ISP98DP10LMXTSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

1.55A

Maximum Drain Source Voltage Vds

100V

Package Type

SOT-223

Series

ISP

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

2Ω

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

4.2W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

3.5nC

Maximum Operating Temperature

175°C

Length

7.3mm

Height

6.7mm

Standards/Approvals

No

Width

1.8 mm

Automotive Standard

No

The Infineon OptiMOS™ P-Channel MOSFETs 100V in SOT-223 package represents the new technology targeted for battery management, load switch and reverse polarity protection applications. The main advantage of a P-channel device is the reduction of design complexity in medium and low power applications. Its easy Interface to MCU, fast switching as well as avalanche ruggedness makes it suitable for high quality demanding applications. It is available in normal level featuring a wide RDS(on) range and improves efficiency at low loads due to low Qg. It is used in Battery management, Industrial automation.

Ideal for high and low switching frequency

Avalanche ruggedness

Industry standard footprint surface mount package

Robust, reliable performance

Increased security of supply

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