Infineon ISP Type P-Channel MOSFET, 1.9 A, 60 V Enhancement, 3-Pin SOT-223 ISP25DP06LMXTSA1

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Subtotal (1 pack of 5 units)*

Kr.31 46 

(exc. VAT)

Kr.39 325 

(inc. VAT)

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Last RS stock
  • Final 805 unit(s), ready to ship
Units
Per unit
Per Pack*
5 - 45Kr. 6,292Kr. 31,46
50 - 120Kr. 5,262Kr. 26,31
125 - 245Kr. 4,896Kr. 24,48
250 - 495Kr. 4,576Kr. 22,88
500 +Kr. 4,278Kr. 21,39

*price indicative

Packaging Options:
RS Stock No.:
243-9273
Mfr. Part No.:
ISP25DP06LMXTSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

1.9A

Maximum Drain Source Voltage Vds

60V

Series

ISP

Package Type

SOT-223

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.7mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.1V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

81W

Typical Gate Charge Qg @ Vgs

80nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon P-Channel small signal transistor have Pb-free lead plating. The drain current and drain-source voltage of MOSFET is -1.9 A and -60V respectively. It has very low resistance value. The operating temperature is ranges from -55 °C to 150 °C.

Surface Mount technology

Logic level availability

Easy interface to Microcontroller Unit (MCU)

Fast switching

avalanche ruggedness

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