Toshiba Type P-Channel MOSFET, 6 A, 12 V, 3-Pin SOT-23 SSM3J338R,LF(T
- RS Stock No.:
- 236-3569
- Mfr. Part No.:
- SSM3J338R,LF(T
- Brand:
- Toshiba
Bulk discount available
Subtotal (1 pack of 50 units)*
Kr.1 686 50
(exc. VAT)
Kr.2 108 00
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 200 unit(s) shipping from 19. januar 2026
- Plus 400 unit(s) shipping from 26. januar 2026
- Plus 12 000 unit(s) shipping from 05. februar 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 50 | Kr. 33,73 | Kr. 1 686,50 |
| 100 - 200 | Kr. 30,021 | Kr. 1 501,05 |
| 250 - 450 | Kr. 29,378 | Kr. 1 468,90 |
| 500 - 950 | Kr. 28,737 | Kr. 1 436,85 |
| 1000 + | Kr. 26,985 | Kr. 1 349,25 |
*price indicative
- RS Stock No.:
- 236-3569
- Mfr. Part No.:
- SSM3J338R,LF(T
- Brand:
- Toshiba
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 12V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 26.3mΩ | |
| Forward Voltage Vf | 0.75V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 19.5nC | |
| Maximum Power Dissipation Pd | 2W | |
| Maximum Gate Source Voltage Vgs | 10 V | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.8mm | |
| Standards/Approvals | No | |
| Width | 2.9 mm | |
| Length | 2.4mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 12V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 26.3mΩ | ||
Forward Voltage Vf 0.75V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 19.5nC | ||
Maximum Power Dissipation Pd 2W | ||
Maximum Gate Source Voltage Vgs 10 V | ||
Maximum Operating Temperature 150°C | ||
Height 0.8mm | ||
Standards/Approvals No | ||
Width 2.9 mm | ||
Length 2.4mm | ||
Automotive Standard No | ||
The Toshiba field effect transistor MADE up of the silicon material and having P channel MOS type. It is mainly used in power management switching applications.
Storage temperature range −55 to 150 °C
Related links
- Toshiba Type P-Channel MOSFET 12 VLF(T
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