Toshiba Type P-Channel MOSFET, 2 A, 60 V, 3-Pin SOT-23 SSM3J356R,LF(T

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Subtotal (1 pack of 50 units)*

Kr.103 20 

(exc. VAT)

Kr.129 00 

(inc. VAT)

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  • 150 unit(s) ready to ship
  • Plus 50 unit(s) ready to ship from another location
  • Plus 2 750 unit(s) shipping from 02. januar 2026
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Units
Per unit
Per Pack*
50 - 50Kr. 2,064Kr. 103,20
100 - 200Kr. 1,835Kr. 91,75
250 - 450Kr. 1,801Kr. 90,05
500 - 950Kr. 1,766Kr. 88,30
1000 +Kr. 1,652Kr. 82,60

*price indicative

Packaging Options:
RS Stock No.:
236-3573
Mfr. Part No.:
SSM3J356R,LF(T
Brand:
Toshiba
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Brand

Toshiba

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

2A

Maximum Drain Source Voltage Vds

60V

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

400mΩ

Forward Voltage Vf

0.9V

Typical Gate Charge Qg @ Vgs

8.3nC

Maximum Power Dissipation Pd

2W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

-20 V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

2.4mm

Width

2.9 mm

Height

0.8mm

Automotive Standard

No

The Toshiba field effect transistor made up of the silicon material and having P channel MOS type. It is mainly used in power management switching applications.

Storage temperature range −55 to 150 °C

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