Infineon OptiMOS™ N-Channel MOSFET, 433 A, 30 V, 8-Pin TDSON BSC005N03LS5ATMA1

RS Stock No.:: 236-3642
Mfr. Part No.:: BSC005N03LS5ATMA1
Brand:: Infineon

Infineon OptiMOS™ N-Channel MOSFET, 433 A, 30 V, 8-Pin TDSON BSC005N03LS5ATMA1

Subtotal (5000 units, on reels of 5000)*

Kr. 42 335,00

(exc. VAT)

Kr. 52 920,00

(inc. VAT)

FREE delivery for online orders over 750,00 kr

Temporarily out of stock

Shipping from 09 April 2027

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Reel*
5000 +	Kr. 8,467	Kr. 42 335,00

*price indicative

RS Stock No.:: 236-3642
Mfr. Part No.:: BSC005N03LS5ATMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	433A
	Maximum Drain Source Voltage Vds	30V
	Package Type	TDSON
	Series	OptiMOS™
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	5.5mΩ
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	59nC
	Maximum Gate Source Voltage Vgs	20V
	Forward Voltage Vf	1V
	Maximum Power Dissipation Pd	188W
	Maximum Operating Temperature	175°C
	Height	1.1mm
	Width	6.35mm
	Length	5.49mm
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 433A
	Maximum Drain Source Voltage Vds 30V
	Package Type TDSON
	Series OptiMOS™
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 5.5mΩ
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 59nC
	Maximum Gate Source Voltage Vgs 20V
	Forward Voltage Vf 1V
	Maximum Power Dissipation Pd 188W
	Maximum Operating Temperature 175°C
	Height 1.1mm
	Width 6.35mm
	Length 5.49mm
	Standards/Approvals No
	Automotive Standard No

Datasheet - BSC005N03LS5ATMA1

Infineon OptiMOS™ Series MOSFET, 30V Maximum Drain Source Voltage, 433A Maximum Continuous Drain Current - BSC005N03LS5ATMA1

This MOSFET is a high-current N-channel transistor designed for surface-mount power switching in demanding thermal environments. It operates across an extended temperature span and is intended for applications requiring low conduction losses and substantial continuous drain current capacity while mounted in a TDSON package.

Features and Benefits:

• 433 A continuous drain current enables heavy-current switching
• 5.5 mΩ low Rds(on) reduces conduction losses under load
• 30 V drain-source rating allows moderate-voltage power stages
• 188 W power dissipation supports high-power handling
• 59 nC gate charge permits predictable gate-drive energy planning
• ±20 V maximum gate-source voltage gives wide drive margin

Applications

• Suitable for high-current DC-DC converters and regulators
• Ideal for server power rails and telecomms power modules
• Used with motor-drive stages requiring high continuous current
• Can be used for battery management and power distribution
• Suitable for Compact surface-mount power assemblies

What package considerations affect thermal management?

The TDSON surface-mount package provides a low-profile footprint and requires appropriate PCB copper area or thermal vias to dissipate its 188 W rating effectively within board-level thermal constraints.

How does the device handle harsh ambient temperatures?

It is specified to operate from -55 °C to 175 °C, which allows use across a wide temperature range without derating for many high-temperature environments.

What gate-drive requirements should be observed?

Drive circuits must keep gate voltage within ±20 V and account for the 59 nC total gate charge when sizing driver Peak current and switching timing.

How should designers plan for conduction and switching losses?

Use the 5.5 mΩ Rds(on) to estimate I^2R conduction losses and include energy for charging the 59 nC gate when calculating overall thermal and efficiency budgets.