Infineon OptiMOS™ N-Channel MOSFET, 433 A, 30 V, 8-Pin TDSON BSC005N03LS5ATMA1

View all MOSFETs
Bulk discount available
View bulk pricing options

Subtotal (5 units, in packs of 5)*

Kr. 249,16

(exc. VAT)

Kr. 311,45

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 4 925 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units
Per unit
Per Pack*
5 - 45Kr. 49,832Kr. 249,16
50 - 120Kr. 44,914Kr. 224,57
125 - 245Kr. 41,916Kr. 209,58
250 - 495Kr. 38,874Kr. 194,37
500 +Kr. 35,876Kr. 179,38

*price indicative

Packaging Options:
RS Stock No.:
236-3643
Mfr. Part No.:
BSC005N03LS5ATMA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

433A

Maximum Drain Source Voltage Vds

30V

Series

OptiMOS™

Package Type

TDSON

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

5.5mΩ

Maximum Power Dissipation Pd

188W

Typical Gate Charge Qg @ Vgs

59nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20V

Forward Voltage Vf

1V

Maximum Operating Temperature

175°C

Width

6.35mm

Standards/Approvals

No

Length

5.49mm

Height

1.1mm

Automotive Standard

No

Infineon OptiMOS™ Series MOSFET, 30V Maximum Drain Source Voltage, 433A Maximum Continuous Drain Current - BSC005N03LS5ATMA1


This MOSFET is a high-current N-channel transistor designed for surface-mount power switching in demanding thermal environments. It operates across an extended temperature span and is intended for applications requiring low conduction losses and substantial continuous drain current capacity while mounted in a TDSON package.

Features and Benefits:


• 433 A continuous drain current enables heavy-current switching
• 5.5 mΩ low Rds(on) reduces conduction losses under load
• 30 V drain-source rating allows moderate-voltage power stages
• 188 W power dissipation supports high-power handling
• 59 nC gate charge permits predictable gate-drive energy planning
• ±20 V maximum gate-source voltage gives wide drive margin

Applications


• Suitable for high-current DC-DC converters and regulators
• Ideal for server power rails and telecomms power modules
• Used with motor-drive stages requiring high continuous current
• Can be used for battery management and power distribution
• Suitable for Compact surface-mount power assemblies

What package considerations affect thermal management?


The TDSON surface-mount package provides a low-profile footprint and requires appropriate PCB copper area or thermal vias to dissipate its 188 W rating effectively within board-level thermal constraints.

How does the device handle harsh ambient temperatures?


It is specified to operate from -55 °C to 175 °C, which allows use across a wide temperature range without derating for many high-temperature environments.

What gate-drive requirements should be observed?


Drive circuits must keep gate voltage within ±20 V and account for the 59 nC total gate charge when sizing driver Peak current and switching timing.

How should designers plan for conduction and switching losses?


Use the 5.5 mΩ Rds(on) to estimate I^2R conduction losses and include energy for charging the 59 nC gate when calculating overall thermal and efficiency budgets.

Related links

Be the first to know about our latest products and offers

Email address

The personal information you provide to us when signing up to this mailing list will be processed in line with the Privacy Policy