Infineon OptiMOS™ Type N-Channel MOSFET, 237 A, 120 V, 8-Pin HSOF-8 IPT030N12N3GATMA1

Subtotal (1 reel of 2000 units)*

Kr.57 108 00 

(exc. VAT)

Kr.71 384 00 

(inc. VAT)

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Units
Per unit
Per Reel*
2000 +Kr. 28,554Kr. 57 108,00

*price indicative

RS Stock No.:
236-3669
Mfr. Part No.:
IPT030N12N3GATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

237A

Maximum Drain Source Voltage Vds

120V

Series

OptiMOS™

Package Type

HSOF-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

3mΩ

Maximum Power Dissipation Pd

375W

Typical Gate Charge Qg @ Vgs

158nC

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

No

Width

10.58 mm

Height

2.4mm

Length

10.1mm

Automotive Standard

No

The Infineon OptiMOS power MOSFET is the Ideal fit for battery-powered equipment, with optimal balance between additional voltage breakdown margin and low on-state resistance. It is used in light electric vehicle, low voltage drives and battery powered tools.

High power density and improved thermal management

Less board space needed

High system efficiency and less paralleling required

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