Vishay SIS Type N-Channel MOSFET, 87 A, 30 V, 8-Pin PowerPAK 1212-8PT SiSA12BDN-T1-GE3
- RS Stock No.:
- 239-5399
- Mfr. Part No.:
- SiSA12BDN-T1-GE3
- Brand:
- Vishay
Subtotal (1 reel of 3000 units)*
Kr.12 174 00
(exc. VAT)
Kr.15 216 00
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Last RS stock
- Final 3 000 unit(s), ready to ship
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 + | Kr. 4,058 | Kr. 12 174,00 |
*price indicative
- RS Stock No.:
- 239-5399
- Mfr. Part No.:
- SiSA12BDN-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 87A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | SIS | |
| Package Type | PowerPAK 1212-8PT | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0043Ω | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 52W | |
| Typical Gate Charge Qg @ Vgs | 10nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.75mm | |
| Length | 3.3mm | |
| Width | 3.3 mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 87A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series SIS | ||
Package Type PowerPAK 1212-8PT | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0043Ω | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 52W | ||
Typical Gate Charge Qg @ Vgs 10nC | ||
Maximum Operating Temperature 150°C | ||
Height 0.75mm | ||
Length 3.3mm | ||
Width 3.3 mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Vishay N channel MOSFET has drain current of 87 A. It is used for high power density DC/DC, synchronous rectification, VRMs and embedded DC/DC, battery protection
100 % Rg and UIS tested
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