Vishay SIS Type N-Channel MOSFET, 178.3 A, 30 V Enhancement, 8-Pin PowerPAK 1212-8S SISS66DN-T1-GE3
- RS Stock No.:
- 281-6040
- Mfr. Part No.:
- SISS66DN-T1-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 pack of 10 units)*
Kr.134 99
(exc. VAT)
Kr.168 74
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 6 000 unit(s) shipping from 29. desember 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | Kr. 13,499 | Kr. 134,99 |
| 100 - 240 | Kr. 10,593 | Kr. 105,93 |
| 250 - 490 | Kr. 9,701 | Kr. 97,01 |
| 500 - 990 | Kr. 8,912 | Kr. 89,12 |
| 1000 + | Kr. 7,608 | Kr. 76,08 |
*price indicative
- RS Stock No.:
- 281-6040
- Mfr. Part No.:
- SISS66DN-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 178.3A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PowerPAK 1212-8S | |
| Series | SIS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.00138Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 24.7nC | |
| Maximum Power Dissipation Pd | 65.8W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Width | 3.3 mm | |
| Length | 3.3mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 178.3A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PowerPAK 1212-8S | ||
Series SIS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.00138Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 24.7nC | ||
Maximum Power Dissipation Pd 65.8W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Width 3.3 mm | ||
Length 3.3mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay N-channel MOSFET with schottky diode has applications in synchronous rectification, synchronous buck converter, and DC/DC conversions.
TrenchFET Generation IV power MOSFET
SKYFET with monolithic schottky diode
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