STMicroelectronics SCT N-Channel MOSFET, 60 A, 1200 V Enhancement, 3-Pin Hip-247

View all MOSFETs
Bulk discount available
View bulk pricing options

Subtotal 10 units (supplied in a tube)*

Kr. 2 612,90

(exc. VAT)

Kr. 3 266,10

(inc. VAT)

Add to Basket
Select or type quantity
Last RS stock
  • Final 265 unit(s), ready to ship

Units
Per unit
10 - 24Kr. 261,29
25 +Kr. 255,46

*price indicative

Packaging Options:
RS Stock No.:
239-5530P
Mfr. Part No.:
SCTW60N120G2
Brand:
STMicroelectronics
Find similar products by selecting one or more attributes.
Select all

Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

60A

Maximum Drain Source Voltage Vds

1200V

Package Type

Hip-247

Series

SCT

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

73mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

94nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

389W

Maximum Gate Source Voltage Vgs

18V

Forward Voltage Vf

3V

Maximum Operating Temperature

200°C

Height

5mm

Length

34.8mm

Width

15.6mm

Standards/Approvals

UL

Automotive Standard

AEC-Q101

The STMicroelectronics silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature. It can be used in Switching mode power supply, DC-DC converters and Industrial motor control.

Very fast and robust intrinsic body diode

Extremely low gate charge and input capacitance

Very high operating junction temperature capability

Related links

Be the first to know about our latest products and offers

Email address

The personal information you provide to us when signing up to this mailing list will be processed in line with the Privacy Policy