Vishay Type N-Channel MOSFET, 100 A, 60 V Depletion, 8-Pin PowerPAK SO-8 SIR512DP-T1-RE3
- RS Stock No.:
- 239-8647
- Mfr. Part No.:
- SIR512DP-T1-RE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 pack of 5 units)*
Kr.143 57
(exc. VAT)
Kr.179 46
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 6 020 unit(s) shipping from 29. desember 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | Kr. 28,714 | Kr. 143,57 |
| 50 - 120 | Kr. 26,998 | Kr. 134,99 |
| 125 - 245 | Kr. 24,412 | Kr. 122,06 |
| 250 - 495 | Kr. 22,948 | Kr. 114,74 |
| 500 + | Kr. 21,53 | Kr. 107,65 |
*price indicative
- RS Stock No.:
- 239-8647
- Mfr. Part No.:
- SIR512DP-T1-RE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PowerPAK SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.01Ω | |
| Channel Mode | Depletion | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 56nC | |
| Maximum Power Dissipation Pd | 83W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 125°C | |
| Width | 5.15 mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PowerPAK SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.01Ω | ||
Channel Mode Depletion | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 56nC | ||
Maximum Power Dissipation Pd 83W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 125°C | ||
Width 5.15 mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Vishay TrenchFET® is Gen IV power N-Channel MOSFET which operates at 100 V. This MOSFET used for power supply, motor drive control and synchronous rectification.
Very low resistance
UIS tested
Related links
- Vishay N-Channel MOSFET 100 V, 8-Pin PowerPAK SO-8 SIR512DP-T1-RE3
- Vishay N-Channel MOSFET 80 V, 8-Pin PowerPAK SO-8 SiR584DP-T1-RE3
- Vishay N-Channel 100 V N-Channel MOSFET 100 V, 8-Pin PowerPAK SO-8 SIR5102DP-T1-RE3
- Vishay N-Channel MOSFET 100 V, 8-Pin PowerPAK SO-8 SiR516DP-T1-RE3
- Vishay N-Channel MOSFET 100 V, 8-Pin PowerPAK SO-8 SiR514DP-T1-RE3
- Vishay N-Channel MOSFET 100 V, 8-Pin PowerPAK SO-8 SiR882BDP-T1-RE3
- Vishay TrenchFET N-Channel MOSFET 30 V, 8-Pin PowerPAK SO-8 SIRA90DP-T1-RE3
- Vishay TrenchFET N-Channel MOSFET 80 V, 8-Pin PowerPAK SO-8 SIR680DP-T1-RE3