Infineon IPL Type N-Channel MOSFET, 4.5 A, 800 V, 5-Pin ThinPAK 5x6 IPLK80R900P7ATMA1
- RS Stock No.:
- 240-8559
- Distrelec Article No.:
- 304-24-010
- Mfr. Part No.:
- IPLK80R900P7ATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 5 units)*
Kr.80 01
(exc. VAT)
Kr.100 01
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Temporarily out of stock
- Shipping from 02. oktober 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | Kr. 16,002 | Kr. 80,01 |
| 50 - 120 | Kr. 14,232 | Kr. 71,16 |
| 125 - 245 | Kr. 13,43 | Kr. 67,15 |
| 250 - 495 | Kr. 12,47 | Kr. 62,35 |
| 500 + | Kr. 11,508 | Kr. 57,54 |
*price indicative
- RS Stock No.:
- 240-8559
- Distrelec Article No.:
- 304-24-010
- Mfr. Part No.:
- IPLK80R900P7ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 4.5A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | IPL | |
| Package Type | ThinPAK 5x6 | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 1.2mΩ | |
| Maximum Gate Source Voltage Vgs | 3 V | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 43W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 6.42mm | |
| Automotive Standard | AEC-Q101 | |
| Distrelec Product Id | 30424010 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 4.5A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series IPL | ||
Package Type ThinPAK 5x6 | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 1.2mΩ | ||
Maximum Gate Source Voltage Vgs 3 V | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 43W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 6.42mm | ||
Automotive Standard AEC-Q101 | ||
Distrelec Product Id 30424010 | ||
The Infineon 800V CoolMOS™ P7 super junction MOSFET series is a perfect fit for low-power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, audio SMPS, AUX and industrial power. It offers up to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature compared to its predecessor as well as to competitor parts tested in typical flyback applications. It also enables higher power density designs through lower switching losses and better DPAK RDS(on) products. Overall, it helps customers save BOM cost and reduce assembly effort.
Best-in class FOM RDS(on)*Eoss; reduced Qg, Ciss, and Coss
Best-in-class DPAK RDS(on)
Best-in-class V(GS)th of 3V and smallest V(GS)th variation of ±0.5V
Integrated Zener Diode ESD protection
Fully optimized portfolio
Low EMI
The ThinPAK 5x6 package is characterized by a very small footprint of 5x6 mm² and a very low profile with a height of 1 mm and together with its benchmark low parasitic, these features lead to significantly smaller form factors and help to boost power density. This combination makes CoolMOS™ P7 in ThinPAK 5x6 a perfect fit for its target applications.
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