onsemi NTHL Type N-Channel MOSFET, 58 A, 1200 V, 5-Pin TO-247

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Subtotal (1 tube of 450 units)*

Kr.37 223 10 

(exc. VAT)

Kr.46 529 10 

(inc. VAT)

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Units
Per unit
Per Tube*
450 +Kr. 82,718Kr. 37 223,10

*price indicative

RS Stock No.:
241-0743
Mfr. Part No.:
NTHL045N065SC1
Brand:
onsemi
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Brand

onsemi

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

58A

Maximum Drain Source Voltage Vds

1200V

Series

NTHL

Package Type

TO-247

Mount Type

Through Hole

Pin Count

5

Maximum Drain Source Resistance Rds

22mΩ

Maximum Gate Source Voltage Vgs

22 V

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

117W

Typical Gate Charge Qg @ Vgs

105nC

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

Silicon Carbide (SiC) MOSFET - EliteSiC, 32 mohm, 650 V, M2, TO-247-3L


The ON Semiconductor 650 V, 42 mΩ N-Channel silicon carbide MOSFET. Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

High Junction Temperature

High Speed Switching and Low Capacitance

Max RDS(on) = 50 mΩ at Vgs = 18V, Id = 66A

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