Microchip MSC090SMA070B Type N-Channel MOSFET, 20 A, 700 V TO-247
- RS Stock No.:
- 241-9273P
- Mfr. Part No.:
- MSC090SMA070B
- Brand:
- Microchip
Bulk discount available
Subtotal 5 units (supplied in a tube)*
Kr.257 95
(exc. VAT)
Kr.322 45
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Temporarily out of stock
- Shipping from 06. april 2026
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Units | Per unit |
|---|---|
| 5 - 9 | Kr. 51,59 |
| 10 - 99 | Kr. 50,68 |
| 100 + | Kr. 48,28 |
*price indicative
- RS Stock No.:
- 241-9273P
- Mfr. Part No.:
- MSC090SMA070B
- Brand:
- Microchip
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Package Type | TO-247 | |
| Series | MSC090SMA070B | |
| Mount Type | Through Hole | |
| Maximum Drain Source Resistance Rds | 8Ω | |
| Typical Gate Charge Qg @ Vgs | 38nC | |
| Maximum Power Dissipation Pd | 1.6W | |
| Maximum Gate Source Voltage Vgs | 2 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.8V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Microchip | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 700V | ||
Package Type TO-247 | ||
Series MSC090SMA070B | ||
Mount Type Through Hole | ||
Maximum Drain Source Resistance Rds 8Ω | ||
Typical Gate Charge Qg @ Vgs 38nC | ||
Maximum Power Dissipation Pd 1.6W | ||
Maximum Gate Source Voltage Vgs 2 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.8V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Microchip silicon carbide power MOSFET product line from Micro semi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high voltage applications.
Low capacitances and low gate charge
Fast switching speed due to low internal gate resistance
Stable operation at high junction temperature TJ(max) equal to 175 °C
Fast and reliable body diode
Superior avalanche ruggedness
RoHS compliant