Infineon BSC0 Type N-Channel MOSFET, 381 A, 40 V N, 8-Pin SuperSO8 5 x 6 BSC018NE2LSIATMA1
- RS Stock No.:
- 241-9668
- Mfr. Part No.:
- BSC018NE2LSIATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 5 units)*
Kr.62 92
(exc. VAT)
Kr.78 65
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Last RS stock
- Final 5 000 unit(s), ready to ship
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | Kr. 12,584 | Kr. 62,92 |
| 25 - 45 | Kr. 11,898 | Kr. 59,49 |
| 50 - 120 | Kr. 10,776 | Kr. 53,88 |
| 125 - 245 | Kr. 9,702 | Kr. 48,51 |
| 250 + | Kr. 9,198 | Kr. 45,99 |
*price indicative
- RS Stock No.:
- 241-9668
- Mfr. Part No.:
- BSC018NE2LSIATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 381A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | BSC0 | |
| Package Type | SuperSO8 5 x 6 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2.9mΩ | |
| Channel Mode | N | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Power Dissipation Pd | 81W | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 381A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series BSC0 | ||
Package Type SuperSO8 5 x 6 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2.9mΩ | ||
Channel Mode N | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Power Dissipation Pd 81W | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon OptiMOS™ 5 N-channel power MOSFET has 25 V drain source voltage (VDS) & 153 A drain current (ID). It's ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, makes it the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. It saves overall system costs by reducing the number of phases in multiphase converters and reduce power losses and increase efficiency for all load conditions.
Optimized for high performance buck converter
Monolithic integrated schottky like diode
Very low on-resistance RDS(on)@VGS = 4.5V
100% avalanche tested
N-channel
Qualified according to JEDEC1) for target applications
Pb-free lead plating
RoHS compliant
Halogen-free according to IEC61249-2-21
Related links
- Infineon OptiMOS™ N-Channel MOSFET 25 V, 8-Pin SuperSO8 5 x 6 BSC018NE2LSIATMA1
- Infineon N-Channel MOSFET 25 V, 8-Pin SuperSO8 5 x 6 BSZ017NE2LS5IATMA1
- Infineon N-Channel MOSFET 25 V, 8-Pin SuperSO8 5 x 6 BSZ033NE2LS5ATMA1
- Infineon OptiMOS™ 5 N-Channel MOSFET 25 V, 8-Pin SuperSO8 5 x 6 BSC009NE2LS5IATMA1
- Infineon OptiMOS™ N-Channel MOSFET 25 V, 8-Pin SuperSO8 5 x 6 BSC015NE2LS5IATMA1
- Infineon OptiMOS™ 5 N-Channel MOSFET 25 V, 8-Pin SuperSO8 5 x 6 BSC009NE2LS5ATMA1
- Infineon OptiMOS™ 5 N-Channel MOSFET 25 V, 8-Pin SuperSO8 5 x 6 BSC009NE2LS5ATMA1
- Infineon HEXFET N-Channel MOSFET 25 V, 8-Pin SuperSO8 5 x 6 IRFH8201TRPBF