Infineon BSC Type N-Channel MOSFET, 381 A, 40 V N, 8-Pin SuperSO8 5 x 6 BSC066N06NSATMA1
- RS Stock No.:
- 241-9675
- Mfr. Part No.:
- BSC066N06NSATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 5 units)*
Kr.82 72
(exc. VAT)
Kr.103 40
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 6 695 unit(s) shipping from 29. desember 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | Kr. 16,544 | Kr. 82,72 |
| 50 - 120 | Kr. 14,254 | Kr. 71,27 |
| 125 - 245 | Kr. 13,408 | Kr. 67,04 |
| 250 - 495 | Kr. 12,424 | Kr. 62,12 |
| 500 + | Kr. 11,60 | Kr. 58,00 |
*price indicative
- RS Stock No.:
- 241-9675
- Mfr. Part No.:
- BSC066N06NSATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 381A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | SuperSO8 5 x 6 | |
| Series | BSC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.7mΩ | |
| Channel Mode | N | |
| Maximum Power Dissipation Pd | 81W | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 381A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type SuperSO8 5 x 6 | ||
Series BSC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.7mΩ | ||
Channel Mode N | ||
Maximum Power Dissipation Pd 81W | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon OptiMOS™ 5 N-channel MOSFET has 60 V drain source voltage (VDS) & 64 A drain current (ID). It is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition, these devices are a perfect choice for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter.
Optimized for high performance SMPS ,e.g. sync. rec.
100% avalanche tested
Superior thermal resistance
N-channel
Qualified according to JEDEC1) for target applications
Pb-free lead plating
RoHScompliant
Halogen-free according to IEC61249-2-21
Related links
- Infineon N-Channel MOSFET Transistor 60 V, 8-Pin SuperSO8 5 x 6 BSC066N06NSATMA1
- Infineon N-Channel MOSFET Transistor 20 V, 8-Pin SuperSO8 5 x 6 IAUC60N04S6N044ATMA1
- Infineon N-Channel MOSFET Transistor 60 V, 8-Pin SuperSO8 5 x 6 BSZ065N06LS5ATMA1
- Infineon N-Channel MOSFET Transistor 60 V, 8-Pin SuperSO8 5 x 6 BSZ040N06LS5ATMA1
- Infineon N-Channel MOSFET Transistor 60 V, 8-Pin SuperSO8 5 x 6 BSC097N06NSTATMA1
- Infineon OptiMOS™ N-Channel MOSFET 60 V, 8-Pin SuperSO8 5 x 6 BSC065N06LS5ATMA1
- Infineon N-Channel MOSFET Transistor 40 V, 8-Pin SuperSO8 5 x 6 IPZ40N04S5L2R8ATMA1
- Infineon N-Channel MOSFET Transistor 80 V, 8-Pin SuperSO8 5 x 6 IAUZ20N08S5L300ATMA1